Accurate equivalent-network modelling of GaAs/AlAs based resonant tunnelling diodes with thin barrier layers

被引：3

作者：

Kwaspen, JJM

Lepsa, MI

van de Roer, TG

van der Vleuten, W

机构：

[1] Eindhoven Univ Technol, Fac Elect Engn, Elect Devices Grp, COBRA,Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

[2] Nat Res Inst Mat Phys, Bucharest 76900, Romania

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 19期

关键词：

resonant tunnelling devices; semiconductor devices; equivalent circuits;

D O I：

10.1049/el:19971107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2V bias-voltage and 0.05-40.05GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted.

引用

页码：1657 / 1658

页数：2

共 43 条

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