Accurate equivalent-network modelling of GaAs/AlAs based resonant tunnelling diodes with thin barrier layers

被引：3
|
作者：
Kwaspen, JJM
Lepsa, MI
van de Roer, TG
van der Vleuten, W
机构：
[1] Eindhoven Univ Technol, Fac Elect Engn, Elect Devices Grp, COBRA,Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands
[2] Nat Res Inst Mat Phys, Bucharest 76900, Romania
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 19期
关键词：
resonant tunnelling devices; semiconductor devices; equivalent circuits;
D O I：
10.1049/el:19971107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2V bias-voltage and 0.05-40.05GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted.
引用
收藏
页码：1657 / 1658
页数：2
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