Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression

被引：7

作者：

Gibiino, Gian Piero ^{[1
]}

Santarelli, Alberto ^{[1
]}

Cignani, Rafael ^{[1
]}

Traverso, Pier Andrea ^{[1
]}

Filicori, Fabio ^{[1
]}

机构：

[1] Univ Bologna, Dept Elect Elect & Informat Engn G Marconi, I-40136 Bologna, Italy

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2019年 / 29卷 / 09期

关键词：

Empirical modeling; field-effect transistor (FET); GaN; parasitic effects; CAPACITANCES;

D O I：

10.1109/LMWC.2019.2933095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).

引用

页码：598 / 600

页数：3

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