Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression

被引：7
|
作者：
Gibiino, Gian Piero [1 ]
Santarelli, Alberto [1 ]
Cignani, Rafael [1 ]
Traverso, Pier Andrea [1 ]
Filicori, Fabio [1 ]
机构：
[1] Univ Bologna, Dept Elect Elect & Informat Engn G Marconi, I-40136 Bologna, Italy
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2019年 / 29卷 / 09期
关键词：
Empirical modeling; field-effect transistor (FET); GaN; parasitic effects; CAPACITANCES;
D O I：
10.1109/LMWC.2019.2933095
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).
引用
收藏
页码：598 / 600
页数：3
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