Improved model for single-event burnout mechanism

被引：19
|
作者：
Kuboyama, S [1 ]
Ikeda, N
Hirao, T
Matsuda, S
机构：
[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan
[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期
关键词：
avalanche multiplication; bipolar junction transistor (BJT); energetic particle induced charge spectroscopy; (EPICS); power MOSFET; single-event burnout (SEB);
D O I：
10.1109/TNS.2004.839512
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe an improved model for single-event burnout (SEB) mechanism. The model includes the direct tunneling of carriers at the interface of epitaxial layer and substrate. Compared with our previous models, the new model is more successful in reproducing the voltage dependence of the collected charge when incident heavy ions strike the emitter area. The model clearly explains the reason why the emitter stripe region was more susceptible to SEBs.
引用
收藏
页码：3336 / 3341
页数：6
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