Enhanced avalanche multiplication factor and single-event burnout

被引：12
|
作者：
Kuboyama, S [1 ]
Ikeda, N
Hirao, T
Matsuda, S
机构：
[1] Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan
[2] Japan Atom Energy Res Inst, Takasaki Radiat Chem Res Estab, Takasaki, Gumma 3701292, Japan
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
avalanche effect; avalanche multiplication; bandgap narrowing; bipolar junction transistor (BJT); energetic particle induced charge spectroscopy (EPICS); power MOSFET; single-event burnout (SEB);
D O I：
10.1109/TNS.2003.820730
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe experimental data for single-event burnout of bipolar junction transistors and the results of analysis using device simulators. The analysis indicates that the enhanced impact ionization rate in the ion track plays an essential role to trigger the burnout.
引用
收藏
页码：2233 / 2238
页数：6
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