A Bi-directional Electric Field Enhanced Field Stop Reverse Blocking IGBT

被引：0

作者：

Yang, Wentao ^{[1
]}

Li, Zehong ^{[1
]}

Jia, Yaoyao ^{[1
]}

Zhang, Jinping ^{[1
]}

Ren, Min ^{[1
]}

Chen, Weizhong ^{[1
]}

Chen, Qian ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2014年

关键词：

Reverse Blocking Insulated Gate Bipolar Transistor; Field Stop; Electric Field Enhancement; Carrier Store Effect;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58 mu m, only 70% of the conventional counterpart, while maintaining 820V and 818V in forward and reverse blocking conditions, respectively. The blocking capability is 15% higher than the conventional one. Moreover, due to the carrier-storage effect, the carrier distribution during the on-state can be optimized. As a result, the proposed one has a lower onstate voltage (1.15V, 20% drop) and a less turn-off power loss (5.4mJ/cm2, 39% decrease) as well.

引用

页码：39 / 42

页数：4

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