Characterization of Oxide Interface Charges in Trench Field Stop IGBT

被引：2
|
作者：
Sim, Zhi Lin [1 ,2 ]
Chin, Wei Mien [2 ]
Bong, Yi Xiang [2 ]
Goh, David [2 ]
Ngwan, Voon Cheng [2 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
[2] STMicroelectronics, Singapore, Singapore
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
Trench Power Device; Oxide Interface Charges; Forming Gas Annealing;
D O I：
10.1109/JCS57290.2023.10102939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interface charges. These charges are responsible for the device performance, stability, and long-term reliability degradation. In this work, we characterized the charges by performing various %H-2/N-2 forming gas annealing in FS IGBT and determined the optimal anneal condition to intrinsically passivate the oxide interface charges.
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页数：3
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