Field Stop Shorted Anode Trench IGBT for Induction Heating Appliances

被引：0

作者：

Yeon, Jae-Eul ^{[1
]}

Park, Min-Young ^{[1
]}

Cho, Kyu-Min ^{[2
]}

Kim, Hee-Jun ^{[3
]}

机构：

[1] Fairchild Semicond, HVPCIA, Consumer Power Syst Team, San Jose, CA USA

[2] Yuhan Univ, Dept Informat & Commun, Yuhan, South Korea

[3] Hanyang Univ, Sch Elect & Comp Engn, Hanyang, South Korea

来源：

38TH ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2012) | 2012年

关键词：

High voltage Field Stop IGBT; Shorted Anode and Induction Heating;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper introduces a newly developed field stop shorted anode trench IGBT with intrinsic body diode like power MOSFETs, and presents its effectiveness for the single ended resonant inverter in induction heating applications. Although the new device combines both IGBT and body diode functions it can provide better performances by means of an advanced fieid stop trench IGBT technology. The effectiveness of the new device is validated in an experiment using 1.8kW single-ended induction heating resonant inverter.

引用

页码：422 / 426

页数：5

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