Theoretical study of a GaAs lateral p-i-n photodetector

被引：5
|
作者：
Haralson, JN [1 ]
Parks, JW [1 ]
Brennan, KF [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期
关键词：
D O I：
10.1063/1.121146
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a numerical study of a high speed GaAs lateral p-i-n (LPIN) photodiode. The LPIN is a planar structure composed of interdigitated p(+) and n(+) wells. A metal-semiconductor-metal (MSM) photodiode with identical finger spacing and geometry is simulated for comparison. When pulsed with an 827 nm optical source at 0.68 mW/cm(2), the lateral p-i-n exhibited improved frequency performance and responsivity compared to the MSM. The dark current and capacitance are similar in magnitude between the two devices. Based on these results, it is concluded that a lateral p-i-n can be an attractive alternative to standard MSM photodetectors. (C) 1998 American Institute of Physics.
引用
收藏
页码：1641 / 1643
页数：3
相关论文
共 50 条
  • [21] Radiation hardness of GaAs p-i-n structures
    Inst of Nuclear Research of Russian, Acad of Sciences, Moscow, Russia
    Prib Tekh Eksp, 4 (496):
  • [22] Radiation hardness of GaAs p-i-n structures
    Bolotov, VN
    Ivan'shin, YI
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1998, 41 (04) : 496 - 497
  • [23] InGaAs/GaAs photorefractive p-i-n diode
    Iwamoto, S
    Taketomi, S
    Suzuki, K
    Nishioka, M
    Someya, T
    Arakawa, Y
    Shimura, T
    Kuroda, K
    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 824 - 825
  • [24] Investigation of a p-i-n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots
    Kryzhanovskaya, N. V.
    Blokhin, S. A.
    Makhov, I. S.
    Moiseev, E. I.
    Nadtochiy, A. M.
    Fominykh, N. A.
    Mintairov, S. A.
    Kaluyzhnyy, N. A.
    Guseva, Yu. A.
    Kulagina, M. M.
    Zubov, F. I.
    Kolodeznyi, E. S.
    Maximov, M. V.
    Zhukov, A. E.
    SEMICONDUCTORS, 2023, 57 (13) : 594 - 598
  • [25] In0.11Ga0.89N-based p-i-n photodetector
    Su, Y. K.
    Lee, H. C.
    Lin, J. C.
    Huang, K. C.
    Lin, W. J.
    Li, T. C.
    Chang, K. J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S811 - S813
  • [26] Negative photoresponsse of AlGaN-based p-i-n photodetector
    Liu Fu-Hao
    Xu Jin-Tong
    Liu Fei
    Wang Li-Wei
    Zhang Yan
    Li Xiang-Yang
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2014, 33 (04) : 386 - 390
  • [27] INTEGRATED WAVEGUIDE P-I-N PHOTODETECTOR BY MOVPE REGROWTH.
    Chandrasekhar, S.
    Campbell, Joe C.
    Dentai, A.G.
    Joyner, C.H.
    Qua, G.J.
    Snell, William W.
    Electron device letters, 1987, EDL-8 (11): : 512 - 514
  • [28] Improvement of GaInNAs p-i-n photodetector responsivity by antimony incorporation
    Loke, W. K.
    Yoon, S. F.
    Tan, K. H.
    Wicaksono, S.
    Fan, W. J.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
  • [29] SILICON P-I-N PHOTODETECTOR USING INTERNAL REFLECTION METHOD
    LEE, HS
    SZE, SM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) : 342 - +
  • [30] Towards an AlGaN, solar-blind, p-i-n photodetector
    Pulfrey, DL
    Kuek, JJ
    Nener, BD
    Parish, G
    Mishra, UK
    Tarsa, EJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 169 - 173
12345