Theoretical study of a GaAs lateral p-i-n photodetector

被引：5

作者：

Haralson, JN ^{[1
]}

Parks, JW ^{[1
]}

Brennan, KF ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a numerical study of a high speed GaAs lateral p-i-n (LPIN) photodiode. The LPIN is a planar structure composed of interdigitated p(+) and n(+) wells. A metal-semiconductor-metal (MSM) photodiode with identical finger spacing and geometry is simulated for comparison. When pulsed with an 827 nm optical source at 0.68 mW/cm(2), the lateral p-i-n exhibited improved frequency performance and responsivity compared to the MSM. The dark current and capacitance are similar in magnitude between the two devices. Based on these results, it is concluded that a lateral p-i-n can be an attractive alternative to standard MSM photodetectors. (C) 1998 American Institute of Physics.

引用

页码：1641 / 1643

页数：3

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