Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12

被引：27
|
作者：
Wu, J. H. [1 ]
Li, P. W. [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 01期
关键词：
D O I：
10.1088/0268-1242/22/1/S21
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have experimentally fabricated Ge-nanocrystals (ncs) metal-oxide-semiconductor field-effect transistors (MOSFETs) with significant capacitance-voltage hysteresis window, threshold voltage shift and good retention. The Ge-ncs/SiO2 system has a good charge storage capability with a charge loss of 12.5% after 10 years retention. This work shows that the heart of the nonvolatile memory transistors, Ge-ncs, is formed by thermal oxidation of polycrystalline Si0.88Ge0.12, which is a simple method and can be easily adapted in the fabrication of embedded circuits.
引用
收藏
页码：S89 / S92
页数：4
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