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- [41] Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 795 - 798
- [42] Weak localization/antilocalization in a nearly symmetric In0.53Ga0.47As/In0.52Al0.48As quantum well PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
- [43] 0.12μm gate length In0.52Al0.48AS/In0.53Ga0.47As HEMTs on transferred substrate COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 101 - 105
- [45] SI-INDUCED DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS MULTIQUANTUM WELL STRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1731 - L1733