Study of dark counts in Geiger mode In0.53Ga0.47As/In0.52Al0.48AsSACM APDs

被引:0
|
作者
Karve, G [1 ]
Wang, S [1 ]
Ma, F [1 ]
Li, X [1 ]
Campbell, JC [1 ]
Ispasoiu, R [1 ]
Bethune, DS [1 ]
Risk, WP [1 ]
机构
[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:72 / 73
页数:2
相关论文
共 50 条
  • [21] IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS ABRUPT DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    LEE, W
    FONSTAD, CG
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 683 - 685
  • [22] Study of In0.53Ga0.47As/In0.52Al0.48 quantum wells on InP by spectroscopic ellipsometry and photoluminescence
    Dinges, H.W.
    Hillmer, H.
    Burkhard, H.
    Losch, R.
    Nickel, H.
    Schlapp, W.
    Surface Science, 1994, _ (1 -3 pt B) : 1057 - 1060
  • [23] INTERSUBBAND ABSORPTION IN IN0.53GA0.47AS/IN0.52AL0.48AS MULTIPLE QUANTUM-WELLS
    ASAI, H
    KAWAMURA, Y
    PHYSICAL REVIEW B, 1991, 43 (06): : 4748 - 4759
  • [24] Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate
    Kulbachinskii, Vladimir A.
    Lunin, Roman A.
    Yuzeeva, Natalia A.
    Galiev, Galib B.
    Vasilievskii, Ivan S.
    Klimov, Eugene A.
    ADVANCES IN NANODEVICES AND NANOFABRICATION, 2012, : 273 - 282
  • [25] Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells
    T. Koga
    J. Nitta
    S. Marcet
    Journal of Superconductivity, 2003, 16 : 331 - 334
  • [26] Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate
    Kulbachinskii, V. A.
    Lunin, R. A.
    Yuzeeva, N. A.
    Galiev, G. B.
    Vasilievskii, I. S.
    Klimov, E. A.
    ACTA PHYSICA POLONICA A, 2013, 123 (02) : 345 - 348
  • [27] IMPURITY-INDUCED LAYER DISORDERING OF IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURES
    BAIRD, RJ
    POTTER, TJ
    LAI, R
    KOTHIYAL, GP
    BHATTACHARYA, PK
    APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2302 - 2304
  • [28] Terahertz quantum cascade lasers based on In0.53Ga0.47As/In0.52Al0.48As/InP
    Fischer, M.
    Scalari, G.
    Walther, Ch.
    Faist, J.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1939 - 1943
  • [29] Electron-phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
    Prasad, C
    Ferry, DK
    Vasileska, D
    Wieder, HH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 215 - 220
  • [30] INTERFACE STATES IN MODULATION-DOPED IN0.52AL0.48AS IN0.53GA0.47AS HETEROSTRUCTURES
    HONG, WP
    OH, JE
    BHATTACHARYA, PK
    TIWALD, TE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (10) : 1585 - 1590