Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory

被引：0
|
作者：
Irom, Farokh [1 ]
Allen, Gregory R. [1 ]
Sheldon, Douglas J. [1 ]
机构：
[1] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
来源：
2016 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavy ion, proton and electron single-event effect measurements of 8Gb Samsung single level NAND flash memory are reported. An increase in the heavy ion single bit upset (SBU) cross section was observed on devices that were irradiated with Co-60 previously. The proton susceptibility is less than expected. No electron induced upsets were observed.
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页码：231 / 236
页数：6
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