Heavy Ion, Proton and Electron Single-Event Effect Measurements of a Commercial Samsung NAND Flash Memory

被引：0
|
作者：
Irom, Farokh [1 ]
Allen, Gregory R. [1 ]
Sheldon, Douglas J. [1 ]
机构：
[1] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91109 USA
来源：
2016 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Heavy ion, proton and electron single-event effect measurements of 8Gb Samsung single level NAND flash memory are reported. An increase in the heavy ion single bit upset (SBU) cross section was observed on devices that were irradiated with Co-60 previously. The proton susceptibility is less than expected. No electron induced upsets were observed.
引用
收藏
页码：231 / 236
页数：6
相关论文
共 50 条
  • [21] Impact of heavy ion energy and species on single-event upset in commercial floating gate cells
    Ye, Bing
    Mo, Li-Hua
    Zhai, Peng-Fei
    Cai, Li
    Liu, Tao
    Yin, Ya-Nan
    Sun, You-Mei
    Liu, Jie
    MICROELECTRONICS RELIABILITY, 2021, 120
  • [22] A single-electron analysis of NAND Flash memory programming
    Nicosia, G.
    Paolucci, G. M.
    Compagnoni, C. Monzio
    Resnati, D.
    Miccoli, C.
    Spinelli, A. S.
    Lacaita, A. L.
    Visconti, A.
    Goda, A.
    2015 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2015,
  • [23] Single-Event Effect Performance of a Commercial Embedded ReRAM
    Chen, Dakai
    Kim, Hak
    Phan, Anthony
    Wilcox, Edward
    LaBel, Kenneth
    Buchner, Stephen
    Khachatrian, Ani
    Roche, Nicolas
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 3088 - 3094
  • [24] Single-Event Upset in 3-D Charge-Trap NAND Flash Memories
    Park, Jounghun
    Han, Jin-Woo
    Yoon, Gilsang
    Go, Donghyun
    Kim, Donghwi
    Kim, Jungsik
    Lee, Jeong-Soo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (11) : 6089 - 6094
  • [25] Effect of radiation and endurance on pulsed programming of commercial NAND Flash memory
    Narasimham, Avyaya Jayanthi
    Han, K. Michael
    Gonzalez, Andrew A.
    Yang-Scharlotta, Jean
    2017 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW), 2017, : 57 - 62
  • [26] Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory
    Oldham, Timothy R.
    Friendlich, M. R.
    Wilcox, E. P.
    LaBel, K. A.
    Buchner, S. P.
    McMorrow, D.
    Mavis, D. G.
    Eaton, P. H.
    Castillo, J.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) : 2831 - 2836
  • [27] Evaluation of single-event upset tolerance on recent commercial memory ICs
    Nemoto, N
    Matsuzaki, K
    Aoki, J
    Akutsu, T
    Matsuda, S
    Naito, I
    Itoh, H
    Nashiyama, I
    EECC'97 - PROCEEDINGS OF THE THIRD ESA ELECTRONIC COMPONENTS CONFERENCE, 1997, 395 : 461 - 466
  • [28] Effect of ion position on single-event transient current
    Hirao, T
    Nashiyama, I
    Kamiya, T
    Suda, T
    Sakai, T
    Hamano, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 130 (1-4): : 486 - 490
  • [29] Effect of ion position on single-event transient current
    Japan Atomic Energy Inst, Gunma, Japan
    Nucl Instrum Methods Phys Res Sect B, 1-4 (486-490):
  • [30] The proton irradiation facility for Single-Event effect testing in CIAE
    Zhang, Yan-Wen
    Guo, Gang
    Liu, Jian-Cheng
    Han, Jin-Hua
    Qin, Ying-Can
    Yin, Qian
    Xiao, Shu-Yan
    Yang, Xin-Yu
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2022, 517 : 43 - 48
12345