Atomic layer deposition of CuxS for solar energy conversion

被引：138
|
作者：
Reijnen, L [1 ]
Meester, B [1 ]
Goossens, A [1 ]
Schoonman, J [1 ]
机构：
[1] Delft Univ Technol, Inorgan Chem Lab, Fac Sci Appl, NL-2628 BL Delft, Netherlands
来源：
CHEMICAL VAPOR DEPOSITION | 2003年 / 9卷 / 01期
关键词：
atomic layer deposition; copper; solar cells; sulfides; titanium dioxide;
D O I：
10.1002/cvde.200290001
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Thin films of photoactive Cu1.8S have been deposited by atomic layer deposition (ALD) using Cu(thd)(2) and H2S as the precursors. This is a first step in the construction of nanoporous heterojunctions of TiO2/Cu1.8S. The ALD process can be divided into two temperature regimes: below 175degreesC, adsorption of the complete Cu(thd)(2) molecule occurs, followed by an exchange reaction with H2S yielding CuS; above 175 degreesC, Cu(thd)(2) reduces upon adsorption and slowly decomposes yielding Cu1.8S. The slow decomposition of Cu(thd)(2) ensures that smooth and homogeneous films can be obtained up to 280degreesC. Flat film solar cell devices of TiO2/Cu1.8S have an open-circuit voltage of about 200 mV and a short-circuit current of 30 muA cm(-2) at 2.8 kW m(-2).
引用
收藏
页码：15 / 20
页数：6
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