Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

被引：33
|
作者：
Poodt, P. [1 ]
Tiba, V. [1 ]
Werner, F. [2 ]
Schmidt, J. [2 ]
Vermeer, A. [3 ]
Roozeboom, F. [1 ,4 ]
机构：
[1] TNO, NL-5600 HE Eindhoven, Netherlands
[2] Inst Solar Energy Res Hamelin, D-31860 Emmerthal, Germany
[3] SoLayTec, NL-5652 AM Eindhoven, Netherlands
[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 09期
关键词：
D O I：
10.1149/1.3610994
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3610994] All rights reserved.
引用
收藏
页码：H937 / H940
页数：4
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