InGaZnO metal-base transistor with high current gain

被引：0

作者：

Huang, H. Y. ^{[1
]}

Wang, S. J. ^{[1
]}

Hung, C. H. ^{[1
]}

Wu, C. H. ^{[1
]}

Lin, W. C. ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 20期

关键词：

SCHOTTKY DIODES;

D O I：

10.1049/el.2014.2201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (beta) 840-310 at V-CE = 2 V and I-B ranging from 1 to 10 nA.

引用

页码：1465 / 1466

页数：2

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