InGaZnO metal-base transistor with high current gain

被引：0
|
作者：
Huang, H. Y. [1 ]
Wang, S. J. [1 ]
Hung, C. H. [1 ]
Wu, C. H. [1 ]
Lin, W. C. [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
来源：
ELECTRONICS LETTERS | 2014年 / 50卷 / 20期
关键词：
SCHOTTKY DIODES;
D O I：
10.1049/el.2014.2201
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (beta) 840-310 at V-CE = 2 V and I-B ranging from 1 to 10 nA.
引用
收藏
页码：1465 / 1466
页数：2
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