ARM 1176 implementation in SOI 45nm technology and silicon measurement

被引：0

作者：

Pottier, Remy ^{[1
]}

Tong, Jonathan ^{[1
]}

Hawkins, Chris ^{[1
]}

Kundu, Roma ^{[1
]}

Pelloie, Jean-Luc ^{[1
]}

机构：

[1] ARM, F-38000 Grenoble, France

来源：

2009 IEEE INTERNATIONAL SOI CONFERENCE | 2009年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper demonstrates the strong power savings of IBM's commercially available 45nm high performance SOI technology on a standard ARM core compared with bulk CMOS low power technology. The benefits are shown for a typical design point for an ARM 11 implementation in mobile phone application. The implementation used standard SOI libraries from ARM and EDA tools.

引用

页码：145 / 148

页数：4

共 50 条

[21] A 45nm Generation Phase Change Memory Technology
Servalli, G.
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 2009, : 103 - 106
[22] FOREMOST project will integrate 45nm CMOS technology
不详
ELECTRONICS WORLD, 2007, 113 (1852): : 6 - 6
[23] Technology modeling and characterization beyond the 45nm node
Nassif, Sani R.
2008 ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE, VOLS 1 AND 2, 2008, : 132 - 132
[24] A novel current reference in 45nm cmos technology
Nagulapalli, R.
Hayatleh, K.
Barker, S.
Zourob, S.
Venkatareddy, A.
PROCEEDINGS OF THE 2017 IEEE SECOND INTERNATIONAL CONFERENCE ON ELECTRICAL, COMPUTER AND COMMUNICATION TECHNOLOGIES (ICECCT), 2017,
[25] A 40-Gb/s Optical Transceiver Front-end in 45nm SOI CMOS Technology
Kim, Joohwa
Buckwalter, James F.
IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010, 2010,
[26] An Open 45nm PD-SOI Standard Cell Library Based on Verified BSIM SOI Spice Model with Predictive Technology
Gong Liwei
Xu Yuan
Zhang Zhi
Shi Weiwei
Teng, Robert K. F.
2013 IEEE 10TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2013,
[27] A 45% PAE pMOS Power Amplifier for 28GHz Applications in 45nm SOI
Thomas, Devon
Rostomyan, Narek
Asbeck, Peter
2018 IEEE 61ST INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2018, : 680 - 683
[28] A Fully-integrated Ka-band Stacked Power Amplifier in 45nm CMOS SOI Technology
Chen, Jing-Hwa
Helmi, Sultan R.
Mohammadi, Saeed
2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 75 - 77
[29] Current Status and Possibilities of Wafer-Bonding-Based SOI Technology in 45nm or below CMOS LSIs
Yoshimi, Makoto
Delpra, Daniel
Cayrefourcq, Ian
Celler, George
Mazure, Carlos
Aspar, Bernard
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 669 - +
[30] A 197 FoMT VCO with 34% Tuning Range for 5G Applications in 45nm SOI Technology
Ibrahim, Yahia Z. M.
Abdalla, Mohamed A. Y.
Mohieldin, Ahmed N.
2022 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2022, : 108 - 110

← 1 2 3 4 5 →