Organic Thin-Film Transistors with Tailored Liquid Sources of HfO2 as a High-κ Insulator

被引：1

作者：

Nishizawa, Ryota ^{[1
]}

Naka, Shigeki ^{[1
]}

Okada, Hiroyuki ^{[1
]}

Suzuki, Kazuyuki ^{[2
]}

Kato, Kazumi ^{[2
]}

机构：

[1] Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

SOL-GEL; ARRAY;

D O I：

10.1143/JJAP.49.04DK08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-kappa insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm(2) V-1 s(-1), and 24 and 3 x 10(3), respectively. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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