Organic Thin-Film Transistors with Tailored Liquid Sources of HfO2 as a High-κ Insulator

被引：1
|
作者：
Nishizawa, Ryota [1 ]
Naka, Shigeki [1 ]
Okada, Hiroyuki [1 ]
Suzuki, Kazuyuki [2 ]
Kato, Kazumi [2 ]
机构：
[1] Toyama Univ, Grad Sch Sci & Engn, Toyama 9308555, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期
关键词：
SOL-GEL; ARRAY;
D O I：
10.1143/JJAP.49.04DK08
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Organic thin-film transistors (OTFTs) with tailored liquid sources of HfO2 as a high-kappa insulator were investigated. To investigate the effect of UV irradiation, two types of light source were tested. The contact angles of water and polycrystalline condition of a pentacene were systematically changed and the resultant OTFT characteristics were also changed. The field-effect mobilities and on-off ratios obtained using a high-pressure mercury lamp and a deep-UV lamp as irradiation sources were 0.035 and 0.10 cm(2) V-1 s(-1), and 24 and 3 x 10(3), respectively. (C) 2010 The Japan Society of Applied Physics
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页数：3
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