Optimization of the fabrication process for ZnO thin-film transistors with HfO2 gate dielectrics

被引：0
|
作者：
Chen, Henry J. H. [1 ]
Yeh, Barry B. L. [1 ]
机构：
[1] Department of Electrical Engineering, National Chi Nan University, Puli Township, Nantou 54561, Taiwan
来源：
Japanese Journal of Applied Physics | 2009年 / 48卷 / 03期
关键词：
Compendex;
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摘要：
Thin film transistors
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