Holistic substrate inspection for defects at the 32nm node and beyond

被引：0
|
作者：
Gastaldo, Philippe [1 ]
机构：
[1] Altatech Semicond SA, Montbonnot St Martin, France
来源：
SOLID STATE TECHNOLOGY | 2010年 / 53卷 / 07期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Systematic inspection of the front-side, back-side and edge of substrates is becoming more critical both to provide holistic, 360-degree wafer inspection as well as to increase the productivity and return on investment from today's multi-billion-dollar fabs. Holistic inspection needs will only increase as the industry continues to drive toward greater cost efficiencies by increasing substrate sizes beyond 300mm diameters to 450mm. This article describes holistic inspection methodology.
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页码：28 / 29
页数：2
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