Structural and Electrical Properties of InAlAs/InGaAs/InAlAs HEMT Heterostructures on InP Substrates with InAs Inserts in Quantum Well

被引：5
|
作者：
Galiev, G. B. [1 ]
Vasiliev, A. L. [2 ,3 ]
Imamov, R. M. [3 ]
Klimov, E. A. [1 ]
Maltsev, P. P. [1 ]
Pushkarev, S. S. [1 ]
Presniakov, M. Yu. [2 ]
Trunkin, I. N. [2 ]
机构：
[1] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
[2] Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia
[3] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2014年 / 59卷 / 06期
关键词：
INTERFACE; CHANNEL; LAYER; PHOTOLUMINESCENCE; TRANSISTORS;
D O I：
10.1134/S1063774514060108
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In0.53Ga0.47As quantum wells (QWs) on the structural and electrical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructures with one-sided delta-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between the energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < <(h)over bar>omega < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.
引用
收藏
页码：900 / 907
页数：8
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