Structural and Electrical Properties of InAlAs/InGaAs/InAlAs HEMT Heterostructures on InP Substrates with InAs Inserts in Quantum Well

被引：5

作者：

Galiev, G. B. ^{[1
]}

Vasiliev, A. L. ^{[2
,3
]}

Imamov, R. M. ^{[3
]}

Klimov, E. A. ^{[1
]}

Maltsev, P. P. ^{[1
]}

Pushkarev, S. S. ^{[1
]}

Presniakov, M. Yu. ^{[2
]}

Trunkin, I. N. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

[2] Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia

[3] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia

来源：

CRYSTALLOGRAPHY REPORTS | 2014年 / 59卷 / 06期

关键词：

INTERFACE; CHANNEL; LAYER; PHOTOLUMINESCENCE; TRANSISTORS;

D O I：

10.1134/S1063774514060108

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A complex study of the influence of nanoscale InAs inserts with thicknesses from 1.7 to 3.0 nm introduced into In0.53Ga0.47As quantum wells (QWs) on the structural and electrical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructures with one-sided delta-Si-doping has been performed. The structural quality of a combined QW was investigated by transmission electron microscopy. A correlation between the electron mobility in QW with the thickness of InAs insert and the technology of its fabrication is established. Specific features of the InP(substrate)/InAlAs(buffer) interface are investigated by transmission electron microscopy and photoluminescence spectroscopy. A relationship between the energy positions of the peak in the photoluminescence spectra in the range of photon energies 1.24 eV < <(h)over bar>omega < 1.38 eV, which is due to the electronic transitions at the InP/InAlAs interface, and the structural features revealed in the interface region is established. It is found that an additional QW is unintentionally formed at the InP/InAlAs interface; the parameters of this QW depend on the heterostructure growth technology.

引用

页码：900 / 907

页数：8

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