The electrical conductivity in the off-stoichiometric Heusler compounds Fe2VX (X = Al, Ga)

被引：1
|
作者：
Deniszczyk, J
Borgiel, W
机构：
[1] Silesian Univ, Inst Phys & Chem Met, PL-40007 Katowice, Poland
[2] Silesian Univ, Chelkowski Inst Phys, PL-40007 Katowice, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 196卷 / 01期
关键词：
D O I：
10.1002/pssa.200306395
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure calculations of the off-stoichiometric Fe2VX (X = Al, Ga) have shown that the Fe atoms at the anti-site positions (Fe at nominally V site) give rise to the narrow band located just at Fermi level (epsilon(F)). To investigate the effect of the narrow band on the electrical resistivity of the Fe2+xV1-xX the two-band model of the quasi-free electron band coupled by the hybridization interaction with the strongly correlated narrow (d-like) band is considered. The calculated temperature dependence of the DC-resistivity agrees qualitatively with the measured one.
引用
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页码：236 / 239
页数：4
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