The electrical conductivity in the off-stoichiometric Heusler compounds Fe2VX (X = Al, Ga)

The electronic structure calculations of the off-stoichiometric Fe2VX (X = Al, Ga) have shown that the Fe atoms at the anti-site positions (Fe at nominally V site) give rise to the narrow band located just at Fermi level (epsilon(F)). To investigate the effect of the narrow band on the electrical resistivity of the Fe2+xV1-xX the two-band model of the quasi-free electron band coupled by the hybridization interaction with the strongly correlated narrow (d-like) band is considered. The calculated temperature dependence of the DC-resistivity agrees qualitatively with the measured one.