Cobalt silicide formations and magnetic properties of laser ablated Co(Cr) thin films
被引:6
|
作者:
Zeng, Fanhao
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机构:
Cent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R ChinaCent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R China
Zeng, Fanhao
[1
]
Xiong, Xiang
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机构:
Cent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R ChinaCent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R China
Xiong, Xiang
[1
]
Huang, Baiyuan
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机构:
Cent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R ChinaCent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R China
Huang, Baiyuan
[1
]
机构:
[1] Cent S Univ, State Key Lab Powder Met, Powder Met Res Inst, Changsha 410083, Peoples R China
Silicides;
Magnetic properties;
Vapor deposition;
Electron microscopy;
transmission;
Magnetic application;
EPITAXIAL COSI2 FORMATION;
PHASE-FORMATION SEQUENCE;
EFFECTIVE HEAT;
GROWTH;
D O I:
10.1016/j.intermet.2009.07.027
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The solid-phase reaction between Si(111) substrate and the Co(Cr) films produced by laser ablation at temperatures ranging from 400 degrees C to 600 degrees C, as well as their magnetic properties were investigated. It has been shown that the Co films consist of CoSi(111) phase during 500-600 degrees C and co-existed CoSi and COSi2 silicides at 600 degrees C by X-ray diffraction and transmission electron microscopy. However, the deposited CoCr22 films contain only CoSi phase with (111) preferential orientation at deposited temperature from 500 degrees C to 600 degrees C, suggesting that the Cr element may act as a diffusion barrier in the CoCr/Si system. The magnetic coercivity and squareness of the produced films decrease as the deposited temperature increases and it almost cannot be detected at 600 degrees C. Adding Cr element into the Co films can improve and adjust the magnetic properties. The theoretical explanations of preferential orientations of CoSi(111) and COSi2(200) have been given by comparing the arrangement of atoms on CoSi(111) and COSi2(200) with that on Si(111). (C) 2009 Elsevier Ltd. All rights reserved.
机构:
Department of Electronics and Communication Engineering, Alliance University, Chandapura-Anekal Road, BengaluruDepartment of Electronics and Communication Engineering, Alliance University, Chandapura-Anekal Road, Bengaluru
Itapu S.
Borra V.
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机构:
Electrical and Computer Engineering Program, Rayen College of Engineering, Youngstown State University, 1 University Plaza, Youngstown, 44555, OHDepartment of Electronics and Communication Engineering, Alliance University, Chandapura-Anekal Road, Bengaluru
Borra V.
Selvendran S.
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机构:
School of Electronics Engineering (SENSE), Vellore Institute of Technology Chennai, Kelambakam-Vandaloor Road, ChennaiDepartment of Electronics and Communication Engineering, Alliance University, Chandapura-Anekal Road, Bengaluru
Selvendran S.
Applied Physics A: Materials Science and Processing,
2023,
129
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