Helium induced cavities in silicon: Their formation, microstructure and gettering ability

被引：12
|
作者：
Kaschny, JR [1 ]
Fichtner, PFP [1 ]
Muecklich, A [1 ]
Kreissig, U [1 ]
Yankov, RA [1 ]
Koegler, R [1 ]
Danilin, AB [1 ]
Skorupa, W [1 ]
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, FWIM, D-01314 Dresden, Germany
来源：
DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷
关键词：
D O I：
10.1557/PROC-469-451
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of cavity microstructures in silicon following helium implantation (10 or 40 keV; 1x10(15), 1x10(16) and 5x10(16) cm(-2)) and annealing (800 degrees C) is investigated by means of Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry and Channeling (RBS/C), and Elastic Recoil Detection (ERD). The processes of cavity nucleation and growth are found to depend critically on the implanted He concentration. For a maximum peak He concentration of about 5x10(20) cm(-3) the resulting microstructure appears to contain large overpressurized bubbles whose formation cannot be accounted by the conventional gas-release model and bubble-coarsening mechanisms predicting empty cavities. The trapping of Fe and Cu at such cavity regions is studied by Secondary Ion Mass Spectrometry (SIMS).
引用
收藏
页码：451 / 456
页数：6
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