Helium induced cavities in silicon: Their formation, microstructure and gettering ability

被引：12

作者：

Kaschny, JR ^{[1
]}

Fichtner, PFP ^{[1
]}

Muecklich, A ^{[1
]}

Kreissig, U ^{[1
]}

Yankov, RA ^{[1
]}

Koegler, R ^{[1
]}

Danilin, AB ^{[1
]}

Skorupa, W ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, FWIM, D-01314 Dresden, Germany

来源：

DEFECTS AND DIFFUSION IN SILICON PROCESSING | 1997年 / 469卷

关键词：

D O I：

10.1557/PROC-469-451

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of cavity microstructures in silicon following helium implantation (10 or 40 keV; 1x10(15), 1x10(16) and 5x10(16) cm(-2)) and annealing (800 degrees C) is investigated by means of Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry and Channeling (RBS/C), and Elastic Recoil Detection (ERD). The processes of cavity nucleation and growth are found to depend critically on the implanted He concentration. For a maximum peak He concentration of about 5x10(20) cm(-3) the resulting microstructure appears to contain large overpressurized bubbles whose formation cannot be accounted by the conventional gas-release model and bubble-coarsening mechanisms predicting empty cavities. The trapping of Fe and Cu at such cavity regions is studied by Secondary Ion Mass Spectrometry (SIMS).

引用

页码：451 / 456

页数：6

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