Optical and Photo-Electrical properties of Zinc Tin Oxide Thin-Film Phototransistor

被引：0
|
作者：
Yang, Chen-Chuan
Tung, Wan-Ju
Chang, Sheng-Po [1 ]
Hsu, Ming-Hung
Huang, Wei-Lun
Li, Cheng-Hsun
Fang, Yu-Jui
Chang, Shoou-Jinn
机构：
[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 70101, Taiwan
来源：
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年
关键词：
Zinc Tin Oxide; thin-film transistor; phototransistor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm(2)/Vs in the saturation region, on/off drain current ratio of 2x10(6), and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19x10(4) at a gate voltage of -15 V under illumination of wavelength 300 nm.
引用
收藏
页码：405 / 406
页数：2
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