Inkjet-Printed Zinc Tin Oxide Thin-Film Transistor

被引:106
|
作者
Kim, Dongjo [1 ]
Jeong, Youngmin [1 ]
Song, Keunkyu [1 ]
Park, Seong-Kee [2 ]
Cao, Guozhong [3 ]
Moon, Jooho [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] LG Display Co Ltd, R&D Ctr, Gyeonggi Do 413811, South Korea
[3] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
关键词
TEMPERATURE FABRICATION; HIGH-PERFORMANCE; LEVEL ALIGNMENT; ZNO; SEMICONDUCTOR;
D O I
10.1021/la901436p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Recently, there has been considerable interest in adapting printing approaches that are typically used in the graphic arts to the printing of electronic circuits and circuit components. We report the fabrication of solution-processed oxide transistors using inkjet printing. A zinc tin oxide sol-gel precursor is utilized as the ink for directly printing a thin uniform semiconducting layer. The printed device performance is significandy influenced by printing conditions such as the Surface wettability and substrate temperature. The inkjet-printed transistors exhibit reproducible electrical performance. demonstrating their potential application in low-cost manufacturing of large-area flat panel displays.
引用
收藏
页码:11149 / 11154
页数:6
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