A High-Speed H-Bridge Circuit Based on GaN HFETs and custom resonant gate drivers

被引：0
|
作者：
Wang, Bo [1 ]
Monti, Antonello [2 ]
Riva, Marco [3 ]
机构：
[1] Univ S Carolina, 301 Main St, Columbia, SC 29208 USA
[2] Rhein Westfal TH Aachen, D-52062 Aachen, Germany
[3] Univ Milan, I-20133 Milan, Italy
来源：
2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6 | 2009年
关键词：
H-Bridge; High-speed; GaN HFET;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The paper describes a high-speed high efficiency H-Bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.
引用
收藏
页码：481 / +
页数：2
相关论文
共 50 条
  • [41] AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HFETs Based DC-DC Boost Converters with Integrated Gate Drivers
    Cui, Miao
    Bu, Qinglei
    Cai, Yutao
    Sun, Ruize
    Liu, Wen
    Wen, Huiqing
    Lam, Sang
    Liang, Yung C.
    Mitrovic, Ivona Z.
    Taylor, Stephen
    Chalker, Paul R.
    Zhao, Cezhou
    2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA), 2019,
  • [42] High-speed operation of a novel frequency divider using resonant tunneling chaos circuit
    Kawano, Y
    Ohno, Y
    Kishimoto, S
    Maezawa, K
    Mizutani, T
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 236 - 239
  • [43] Reliable digital dead-time generator for the GaN HEMTs based H-bridge converters
    Svarny, Jiri
    ARCHIVES OF ELECTRICAL ENGINEERING, 2020, 69 (04) : 781 - 792
  • [44] High-speed operation of a novel frequency divider using resonant tunneling chaos circuit
    Kawano, Y
    Ohno, Y
    Kishimoto, S
    Maezawa, K
    Mizutani, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2B): : 1150 - 1153
  • [45] A Desaturation-based High-speed Overcurrent Detection Gate Driver with High Noise Immunity for GaN HEMTs Power Semiconductor
    Bai, Meng-Yao
    Min, Sung-Soo
    Kim, Rae-Young
    2021 24TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2021), 2021, : 159 - 163
  • [46] Variable Frequency and Constant Frequency Modulation Techniques for GaN based MHz H-bridge PFC
    Haryani, Nidhi
    Burgos, Rolando
    Boroyevich, Dushan
    2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015), 2015, : 1889 - 1896
  • [47] Integrated High-Speed Over-Current Protection Circuit for GaN Power Transistors
    Xu, Han
    Tang, Gaofei
    Wei, Jin
    Chen, Kevin J.
    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 275 - 278
  • [48] A high-speed highly-linear CMOS S/H circuit
    Sadollahy, Mahmoud
    Hadidi, Khayrollah
    2008 INTERNATIONAL CONFERENCE ON COMPUTER AND COMMUNICATION ENGINEERING, VOLS 1-3, 2008, : 550 - +
  • [49] Design Considerations and Comparison of High-speed Gate Drivers for Si IGBT and SiC MOSFET Modules
    Yin, Shan
    Tseng, K. J.
    Tu, Pengfei
    Simanjorang, Rejeki
    Gupta, Amit K.
    2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
  • [50] Gallium Nitride (GaN) based High-Power Multilevel H-Bridge Inverter for Wireless Power Transfer of Electric Vehicles
    Chevinly, Javad
    Rad, Shervin Salehi
    Nadi, Elias
    Proca, Bogdan
    Wolgemuth, John
    Calabro, Anthony
    Zhang, Hua
    Lu, Fei
    2024 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE AND EXPO, ITEC 2024, 2024,
12345