A High-Speed H-Bridge Circuit Based on GaN HFETs and custom resonant gate drivers

被引：0
|
作者：
Wang, Bo [1 ]
Monti, Antonello [2 ]
Riva, Marco [3 ]
机构：
[1] Univ S Carolina, 301 Main St, Columbia, SC 29208 USA
[2] Rhein Westfal TH Aachen, D-52062 Aachen, Germany
[3] Univ Milan, I-20133 Milan, Italy
来源：
2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6 | 2009年
关键词：
H-Bridge; High-speed; GaN HFET;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The paper describes a high-speed high efficiency H-Bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.
引用
收藏
页码：481 / +
页数：2
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