A High-Speed H-Bridge Circuit Based on GaN HFETs and custom resonant gate drivers

被引：0

作者：

Wang, Bo ^{[1
]}

Monti, Antonello ^{[2
]}

Riva, Marco ^{[3
]}

机构：

[1] Univ S Carolina, 301 Main St, Columbia, SC 29208 USA

[2] Rhein Westfal TH Aachen, D-52062 Aachen, Germany

[3] Univ Milan, I-20133 Milan, Italy

来源：

2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6 | 2009年

关键词：

H-Bridge; High-speed; GaN HFET;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The paper describes a high-speed high efficiency H-Bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.

引用

页码：481 / +

页数：2

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