A 3-D Cache With Ultra-Wide Data Bus for 3-D Processor-Memory Integration

被引:13
|
作者
Zia, Aamir [1 ,2 ]
Jacob, Philip [1 ,2 ]
Kim, Jin-Woo [1 ,2 ]
Chu, Michael [1 ,2 ]
Kraft, Russell P. [1 ,2 ]
McDonald, John F. [1 ,2 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
关键词
3-D integration; cache architecture; data bus; FD-SOI; SRAM; PERFORMANCE; TECHNOLOGY; FUTURE; DESIGN; SOI;
D O I
10.1109/TVLSI.2009.2017750
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Slow cache memory systems and low memory bandwidth present a major bottleneck in performance of modern microprocessors. 3-D integration of processor and memory subsystems provides a means to realize a wide data bus that could provide a high bandwidth and lowlatency on-chip cache. This paper presents a three-tier, 3-D 192-kB cache for a 3-D processor-memory stack. The chip is designed and fabricated in a 0.18 mu m fully depleted SOI CMOS process. An ultra wide data bus for connecting the 3-D cache with the microprocessor is implemented using dense vertical vias between the stacked wafers. The fabricated cache operates at 500 MHz and achieves up to 96 GB/s aggregate bandwidth at the output.
引用
收藏
页码:967 / 977
页数:11
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