Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

被引：129
|
作者：
Namatsu, H [1 ]
Yamaguchi, T [1 ]
Nagase, M [1 ]
Yamazaki, K [1 ]
Kurihara, K [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 42卷
关键词：
D O I：
10.1016/S0167-9317(98)00076-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new resist system providing small linewidth fluctuation has been developed for nanolithography. Hydrogen silsesquioxane (HSQ) resist used here has a small polymer size because of its three-dimensional framework. This framework reduces the size of aggregates in the resist film which strongly influence linewidth fluctuation of resist patterns. The scission of SiH bonds in HSQ by e-beam leads to the crosslinking required for the nega-patterning. In addition, the application of a TMAH developer realizes higher contrast an less thickness loss. Consequently, 20-nm-wide nega-patterns with a rectangular cross-sectional shape are successfully formed with linewidth fluctuation less than 2 nm.
引用
收藏
页码：331 / 334
页数：4
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