Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

被引：129

作者：

Namatsu, H ^{[1
]}

Yamaguchi, T ^{[1
]}

Nagase, M ^{[1
]}

Yamazaki, K ^{[1
]}

Kurihara, K ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 24301, Japan

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00076-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new resist system providing small linewidth fluctuation has been developed for nanolithography. Hydrogen silsesquioxane (HSQ) resist used here has a small polymer size because of its three-dimensional framework. This framework reduces the size of aggregates in the resist film which strongly influence linewidth fluctuation of resist patterns. The scission of SiH bonds in HSQ by e-beam leads to the crosslinking required for the nega-patterning. In addition, the application of a TMAH developer realizes higher contrast an less thickness loss. Consequently, 20-nm-wide nega-patterns with a rectangular cross-sectional shape are successfully formed with linewidth fluctuation less than 2 nm.

引用

页码：331 / 334

页数：4

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