Anneal temperature dependence of Si/SiO2 superlattices photoluminescence

被引：18
|
作者：
Portier, X [1 ]
Ternon, C [1 ]
Gourbilleau, F [1 ]
Dufour, C [1 ]
Rizk, R [1 ]
机构：
[1] ISMRA Univ Caen, LERMAT, F-14050 Caen, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 3-4期
关键词：
Si/SiO2; multilayers; reactive magnetron sputtering; photoluminescence; high resolution transmission electron microscopy; (HRTEM);
D O I：
10.1016/S1386-9477(02)00628-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray reflectometry and high resolution electron microscopy have been used to interpret the photoluminescence properties of annealed (3/19 nm) Si/SiO2 multilayers grown by reactive magnetron sputtering. The multilayers show an emission in the visible and near-infrared range after heat treatment from 900degreesC which tends to decrease from 1200degreesC. Three different origins for the photoluminescence activity have been found. An anneal temperature of 1200degreesC is necessary to optimise the silicon crystallisation within the silicon sublayers. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：439 / 444
页数：6
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