Anneal temperature dependence of Si/SiO2 superlattices photoluminescence

被引：18
|
作者：
Portier, X [1 ]
Ternon, C [1 ]
Gourbilleau, F [1 ]
Dufour, C [1 ]
Rizk, R [1 ]
机构：
[1] ISMRA Univ Caen, LERMAT, F-14050 Caen, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 3-4期
关键词：
Si/SiO2; multilayers; reactive magnetron sputtering; photoluminescence; high resolution transmission electron microscopy; (HRTEM);
D O I：
10.1016/S1386-9477(02)00628-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Photoluminescence spectroscopy, Fourier transform infrared spectroscopy, X-ray reflectometry and high resolution electron microscopy have been used to interpret the photoluminescence properties of annealed (3/19 nm) Si/SiO2 multilayers grown by reactive magnetron sputtering. The multilayers show an emission in the visible and near-infrared range after heat treatment from 900degreesC which tends to decrease from 1200degreesC. Three different origins for the photoluminescence activity have been found. An anneal temperature of 1200degreesC is necessary to optimise the silicon crystallisation within the silicon sublayers. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：439 / 444
页数：6
相关论文
共 50 条
  • [21] Absorption in a-Si/SiO2 Superlattices
    Kilpela, O.
    Karppinen, M.
    Novikov, S.
    Sokolov, V.
    Yliniemi, S.
    Physica Scripta T, 79 : 95 - 98
  • [22] Crystallization of Si/SiO2 superlattices for photovoltaics
    Xia, JA
    Cho, EC
    Green, MA
    Corkish, R
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 2694 - 2697
  • [23] Visible luminescence in Si/SiO2 superlattices
    Lockwood, DJ
    Baribeau, JM
    Grant, PD
    Labbe, HJ
    Lu, ZH
    Stapledon, J
    Sullivan, BT
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 183 - 194
  • [24] Electrical modelling of Si/SiO2 superlattices
    Ouisse, T
    Ioannou-Sougleridis, V
    Kouvatsos, D
    Nassiopoulou, AG
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (21) : 2691 - 2698
  • [25] HYDROGEN ANNEAL OF E' CENTERS IN THERMAL SIO2 ON SI
    LI, Z
    FONASH, SJ
    POINDEXTER, EH
    HARMATZ, M
    RONG, F
    BUCHWALD, WR
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 126 (1-2) : 173 - 176
  • [26] Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
    Shimizu-Iwayama, T
    Hole, DE
    Townsend, PD
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 235 - 239
  • [27] Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
    Shimizu-Iwayama, T
    Hole, DE
    Townsend, PD
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 235 - 239
  • [28] Visible photoluminescence from a-Si:H/SiO2 superlattices fabricated by UHV evaporation
    Nishimoto, K
    Sotta, D
    Durand, HA
    Etoh, K
    Ito, K
    JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 439 - 444
  • [29] Visible photoluminescence from a-Si:H/SiO2 superlattices fabricated by UHV evaporation
    Nishimoto, K
    Sotta, D
    Durand, HA
    Etoh, K
    Ito, K
    LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 439 - 444
  • [30] Photoluminescence of SiO2 and α-Si with silicon nanoinclusions
    Gaponova, DM
    Gorshkov, ON
    Revin, DG
    Tetelbaum, DI
    Trushin, SA
    SMART OPTICAL INORGANIC STRUCTURES AND DEVICES, 2001, 4318 : 31 - 35
12345