Hybrid metrology co-optimization of critical dimension scanning electron microscope and optical critical dimension

被引:5
|
作者
Vaid, Alok [1 ]
Osorio, Carmen [1 ]
Tsai, Jamie [1 ]
Bozdog, Cornel [2 ]
Sendelbach, Matthew [2 ]
Grubner, Eyal [3 ]
Koret, Roy [3 ]
Wolfling, Shay [3 ]
机构
[1] GlobalFoundries, Malta, NY 12020 USA
[2] Nova Measuring Instruments Inc, San Jose, CA 95110 USA
[3] Nova Measuring Instruments Ltd, IL-76100 Rehovot, Israel
来源
关键词
optical critical dimension; critical dimension scanning electron microscope; co-optimization; hybrid metrology; FinFET; 1x node; SCATTEROMETRY; NM;
D O I
10.1117/1.JMM.13.4.041413
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Work using the concept of a co-optimization-based metrology hybridization is presented. Hybrid co-optimization involves the combination of data from two or more metrology tools such that the output of each tool is improved by the output of the other tool. Here, the image analysis parameters from a critical dimension scanning electron microscope (CD-SEM) are modulated by the profile information from optical critical dimension (OCD, or scatterometry), while the OCD-extracted profile is concurrently optimized through addition of the CD-SEM CD results. The test vehicle utilized is the 14-nm technology node-based FinFET high-k/interfacial layer (HK/IL) structure. When compared with the nonhybrid approach, the correlation to reference measurements of the HK layer thickness measurement using hybrid co-optimization resulted in an improvement in relative accuracy of about 40% and in R-2 from 0.81 to 0.91. The measurement of the IL thickness also shows an improvement with hybrid co-optimization: better matching to the expected conditions as well as data that contain less noise. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
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页数:8
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