Synthesis of carbon nitride films by laser ablated graphite under an intense nitrogen atomic beam

被引:0
|
作者
Du, YC [1 ]
Xu, N [1 ]
Ying, ZF [1 ]
Ren, ZM [1 ]
Li, FM [1 ]
机构
[1] Fudan Univ, Dept Elect Engn, State Key Joint Lab Mat Modificat Laser Ion & Ele, Shanghai 200433, Peoples R China
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T [工业技术];
学科分类号
08 ;
摘要
Covalent CARBON NITRIDE FILMS have been synthesized on Si substrates by laser ablation of graphite under an intense nitrogen atomic beam. An are-heated DC discharge source in pure N2 operating pressure of 30-300 Toll. produced an intensity of 10(19) atoms/sr.s nitrogen atomic beam with kinetic energies of 0.5-5.0 eV. As compared with normal glow discharge source, the results of the analysis show that nitrogen atom beam processing with laser ablated graphite is beneficial for the formation of carbon nitride films. The films were examined by Raman and X-rays photoelectron spectroscopy(XPS).
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页码:109 / 115
页数:7
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