Synthesis of carbon nitride films by laser ablated graphite under an intense nitrogen atomic beam

被引:0
|
作者
Du, YC [1 ]
Xu, N [1 ]
Ying, ZF [1 ]
Ren, ZM [1 ]
Li, FM [1 ]
机构
[1] Fudan Univ, Dept Elect Engn, State Key Joint Lab Mat Modificat Laser Ion & Ele, Shanghai 200433, Peoples R China
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Covalent CARBON NITRIDE FILMS have been synthesized on Si substrates by laser ablation of graphite under an intense nitrogen atomic beam. An are-heated DC discharge source in pure N2 operating pressure of 30-300 Toll. produced an intensity of 10(19) atoms/sr.s nitrogen atomic beam with kinetic energies of 0.5-5.0 eV. As compared with normal glow discharge source, the results of the analysis show that nitrogen atom beam processing with laser ablated graphite is beneficial for the formation of carbon nitride films. The films were examined by Raman and X-rays photoelectron spectroscopy(XPS).
引用
收藏
页码:109 / 115
页数:7
相关论文
共 50 条
  • [11] Carbon molecules for intense high-order harmonics from laser-ablated graphite plume
    Fareed, M. A.
    Mondal, S.
    Pertot, Y.
    Ozaki, T.
    JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2016, 49 (03)
  • [13] The influence of atomic nitrogen flux on the composition of carbon nitride thin films
    Merel, P
    Chaker, M
    Tabbal, M
    Moisan, M
    APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3814 - 3816
  • [15] X-ray photoelectron spectroscopy of carbon nitride films deposited by graphite laser ablation in a nitrogen postdischarge
    Tabbal, M
    Merel, P
    Moisa, S
    Chaker, M
    Ricard, A
    Moisan, M
    APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1698 - 1700
  • [16] Carbon nitride thin films prepared by nitrogen ion assisted pulsed laser deposition of graphite using KrF excimer laser
    Yamamoto, K
    Koga, Y
    Fujiwara, S
    Kokai, F
    Kleiman, JI
    Kim, KK
    THIN SOLID FILMS, 1999, 339 (1-2) : 38 - 43
  • [17] Irradiation effect of nitrogen ion beam on carbon nitride thin films
    Aizawa, S
    Nasu, Y
    Aono, M
    Kitazawa, N
    Watanabe, Y
    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS, 2004, 792 : 563 - 567
  • [18] A photoluminescence study of laser ablated gallium nitride thin films
    Wrobel, JM
    Placzek-Popko, E
    Dubowski, JJ
    Tang, HP
    Webb, JB
    PHOTON PROCESSING IN MICROELECTRONICS AND PHOTONICS, 2002, 4637 : 82 - 89
  • [19] Scanning force microscopy on laser ablated silicon nitride films
    Vrinceanu, C
    Flueraru, C
    Dinescu, M
    Vasile, E
    ACTA PHYSICA POLONICA A, 1997, 91 (05) : 1009 - 1014