Analytical descriptions of damage threshold of dielectric materials irradiated by femtosecond pulses

被引：0

作者：

Zhao, Gang ^{[1
]}

Hao, Qiulong ^{[1
]}

Qi, Wenznog ^{[1
]}

Chen, Jianguo ^{[1
]}

Zhang, Jing ^{[1
]}

机构：

[1] Sichuan Univ, Coll Elect & Informat Engn, Chengdu 610064, Peoples R China

来源：

FUNDAMENTAL PROBLEMS OF OPTOELECTRONICS AND MICROELECTRONICS III, PTS 1 AND 2 | 2007年 / 6595卷

关键词：

damaged threshold; pulse width; femtosecond pulse;

D O I：

10.1117/12.726446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For a dielectric exposure to the femtosecond hyperbolic secant pulse, the electron dominated by collisional and multiphoton ionization has been studied. Analytical description of the temporal evolution of the electron density induced by the optical pulse has been given. As the result, at the damage threshold an explicit expression of the pulse width in terms of the pulse fluence has been derived.

引用

页数：7

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