High-Q ring resonators in thin silicon-on-insulator

被引：54

作者：

Baehr-Jones, T ^{[1
]}

Hochberg, M ^{[1
]}

Walker, C ^{[1
]}

Scherer, A ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 16期

关键词：

D O I：

10.1063/1.1781355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding. The optimal waveguide designs were calculated, and the waveguide losses were analyzed. These high-Q resonators are expected to lead to interesting devices for telecommunication filters and sources as well as optical refractive index sensing. (C) 2004 American Institute of Physics.

引用

页码：3346 / 3347

页数：2

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