Thermal stability of thin CoSi2 layers grown on amorphous silicon

被引：1
|
作者：
La Via, F
Alberti, A
Raineri, V
Ravesi, S
Rimini, E
机构：
[1] CNR, IMETEM, I-95121 Catania, Italy
[2] INFM, I-95129 Catania, Italy
[3] Dept Phys, I-95129 Catania, Italy
[4] SGS Thomson Microelect, I-95121 Catania, Italy
来源：
MICROELECTRONIC ENGINEERING | 1997年 / 37-8卷 / 1-4期
关键词：
thermal stability; polysilicon substrate;
D O I：
10.1016/S0167-9317(97)00149-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermal stability of thin cobalt silicide layers grown on amorphous silicon deposited by chemical vapor deposition has been studied in the temperature range between 950 and 1100 degrees C. The relation between the agglomeration process and the increase of the sheet resistance has been evidenced. The range of thermal stability of the silicide is reduced if the CVD amorphous silicon is previously implanted with Si ions. The occurrence of some epitaxial CoSi2 grains in the case of CVD amorphous Si can account for this difference.
引用
收藏
页码：475 / 481
页数：7
相关论文
共 50 条
  • [41] STRUCTURAL INTEGRITY AND THERMAL-STABILITY OF TIN/COSI2 USED AS LOCAL INTERCONNECT IN A SELF-ALIGNED COSI2 PROCESS
    HEGDE, RI
    JONES, RE
    KAUSHIK, VS
    TOBIN, PJ
    APPLIED SURFACE SCIENCE, 1991, 52 (1-2) : 59 - 69
  • [42] Growth of YBa2Cu3O7-x thin films on silicon buffered by CoSi2 layers
    Belousov, I
    Svechnikov, V
    Pan, V
    Buzaneva, E
    Linzen, S
    Seidel, P
    Zandbergen, HW
    PHYSICA C, 2001, 351 (01): : 29 - 33
  • [43] Oxide mediated epitaxy of CoSi2 on silicon
    Tung, RT
    APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3461 - 3463
  • [44] MICROSTRUCTURAL STUDIES OF EPITAXIAL COSI2 LAYERS ON SILICON PRODUCED BY ION-BEAM SYNTHESIS AND RAPID THERMAL ANNEALING
    MEEKISON, CD
    BOOKER, GR
    REESON, KJ
    SPRAGGS, RS
    GWILLIAM, RM
    SEALY, BJ
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7129 - 7133
  • [45] FORMATION OF SILICON-NITRIDE LAYERS BY NITROGEN IMPLANTATION INTO SI/COSI2 SYSTEMS
    ALMONACID, L
    SCHIPPEL, S
    WITZMANN, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 84 - 87
  • [46] KINETICS OF COSI2 FROM EVAPORATED SILICON
    LIEN, CD
    NICOLET, MA
    LAU, SS
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251
  • [47] SYNTHESIS OF THIN BURIED COSI2 LAYERS BY LOW-ENERGY COBALT IMPLANTATION
    JEBASINSKI, R
    MANTL, S
    DIEKER, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 135 - 138
  • [48] Thermal stability of ultra-thin CoSi2 films on Si(100)-2x1 surfaces
    Ikegami, H
    Ikeda, H
    Zaima, S
    Yasuda, Y
    APPLIED SURFACE SCIENCE, 1997, 117 : 275 - 279
  • [49] ALIGNED AND TWINNED ORIENTATIONS IN EPITAXIAL COSI2 LAYERS
    VANDERSTRAETEN, H
    BRUYNSERAEDE, Y
    WU, MF
    VANTOMME, A
    LANGOUCHE, G
    PHILLIPS, JM
    APPLIED PHYSICS LETTERS, 1990, 57 (02) : 135 - 137
  • [50] Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering
    1600, American Institute of Physics Inc. (87):
12345