Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

被引：0
|
作者：
机构：
来源：
| 1600年 / American Institute of Physics Inc.卷 / 87期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering
    Kaendler, ID
    Seeck, OH
    Schlomka, JP
    Tolan, M
    Press, W
    Stettner, J
    Kappius, L
    Dieker, C
    Mantl, S
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 133 - 139
  • [2] X-ray characterization of buried allotaxially grown CoSi2 layers in Si(100)
    Zimmermann, U
    Schlomka, JP
    Tolan, M
    Stettner, J
    Press, W
    Hacke, M
    Mantl, S
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 5823 - 5830
  • [3] Interface structure of MBE-grown CoSi2/Si/CoSi2 layers on Si(111): Partially correlated roughness and diffuse x-ray scattering
    Stettner, J
    Schwalowsky, L
    Seeck, OH
    Tolan, M
    Press, W
    Schwarz, C
    vonKanel, H
    PHYSICAL REVIEW B, 1996, 53 (03): : 1398 - 1412
  • [4] Characterization of CoSi2 formation by x-ray photoelectron spectroscopy
    Zhao, J
    Jones, CM
    Poirier, DM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2570 - 2574
  • [5] Electronic structure and x-ray bands of CoSi2
    Simunek, A
    Vackár, J
    Polcík, M
    Drahokoupil, J
    Wolf, W
    Podloucky, R
    PHYSICAL REVIEW B, 2000, 61 (07) : 4385 - 4388
  • [6] SURFACE CRYSTALLOGRAPHY OF BULK-GROWN COSI2(111) BY X-RAY PHOTOELECTRON DIFFRACTION
    POON, HC
    GRENET, G
    HOLMBERG, S
    JUGNET, Y
    DUC, TM
    LECKEY, R
    PHYSICAL REVIEW B, 1990, 41 (18) : 12735 - 12743
  • [7] X-RAY REFLECTIVITY AND DIFFUSE-SCATTERING STUDY OF COSI2 LAYERS IN SI PRODUCED BY ION-BEAM SYNTHESIS
    BAHR, D
    PRESS, W
    JEBASINSKI, R
    MANTL, S
    PHYSICAL REVIEW B, 1993, 47 (08): : 4385 - 4393
  • [8] Analysis and characterization of 2-D X-ray diffraction profile for CoSi2 film
    Jiang, CH
    Cheng, FX
    Wu, JS
    ACTA METALLURGICA SINICA, 2005, 41 (05) : 487 - 490
  • [9] Characterization of ion beam synthesized epitaxial Si/CoSi2(111) system with ion and x-ray scattering techniques
    Satyam, PV
    Sundaravel, B
    Sekar, K
    Kuri, G
    Ghose, SK
    Rout, B
    Mahapatra, DP
    Dev, BN
    SEMICONDUCTOR DEVICES, 1996, 2733 : 370 - 372
  • [10] Characterization of Cobalt Silicide Formation by X-ray Photoelectron Spectroscopy. II. CoSi2
    Zhao, Jin
    Poirier, Derrick M.
    Surface Science Spectra, 2000, 7 (04): : 329 - 335
12345