Thermal stability of thin CoSi2 layers grown on amorphous silicon

被引：1
|
作者：
La Via, F
Alberti, A
Raineri, V
Ravesi, S
Rimini, E
机构：
[1] CNR, IMETEM, I-95121 Catania, Italy
[2] INFM, I-95129 Catania, Italy
[3] Dept Phys, I-95129 Catania, Italy
[4] SGS Thomson Microelect, I-95121 Catania, Italy
来源：
MICROELECTRONIC ENGINEERING | 1997年 / 37-8卷 / 1-4期
关键词：
thermal stability; polysilicon substrate;
D O I：
10.1016/S0167-9317(97)00149-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermal stability of thin cobalt silicide layers grown on amorphous silicon deposited by chemical vapor deposition has been studied in the temperature range between 950 and 1100 degrees C. The relation between the agglomeration process and the increase of the sheet resistance has been evidenced. The range of thermal stability of the silicide is reduced if the CVD amorphous silicon is previously implanted with Si ions. The occurrence of some epitaxial CoSi2 grains in the case of CVD amorphous Si can account for this difference.
引用
收藏
页码：475 / 481
页数：7
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